| PART |
Description |
Maker |
| 3VD182600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212800YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD393600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| CYT3000A |
linear constant current high voltage high power factor LED driver chips
|
EgoLL
|
| 2220HC682KAT1A 2220HC682KAZ1A 2225SC683KAZ1A 1812G |
1210, 1825, 2225, 3640 X7R Dielectric, High Voltage MLC Chips, Capacitor
|
AVX Corporation
|
| MC12CD060D-F MC12CF080D-F MC12FD560J-F MC12EF120J- |
High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electr...
|
| HIP4081 HIP4081IB |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver
System Basic Chips (SBC); Package: PG-DSO-28; Transceiver: Fault-tollerant CAN ISO 11898 - 3; Voltage Regulator Output: 120 mA; Watchdog: Window
|
Intersil Corporation
|
| 3VD037060NEJL |
N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
